{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11475952","patent":{"patent_number":"US-11475952","title":"Ternary content addressable memory and two-port static random access memory","assignee":null,"inventors":[],"filing_date":"2021-02-19T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"A ternary content addressable memory and a two-port SRAM are provided and include a storage cell and two transistors. The storage cell includes a first active region, a second active region, a third active region, and a fourth active region, extending along a first direction, and a first gate line, a second gate line, a third gate line, and a fourth gate line extending along a second direction. The first gate line crosses the third active region and the fourth active region, the second gate line crosses the fourth active region, the third gate line crosses the first active region, and the fourth gate line crosses the first active region and the second active region. The transistors are electrically connected to the storage cell, and the transistors and the storage cell are arranged along the first direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ternary content addressable memory and two-port static random access memory","description":"A ternary content addressable memory and a two-port SRAM are provided and include a storage cell and two transistors. The storage cell includes a first active region, a second active region, a third a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11475952","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11475952","citation_suggestion":"Patentable. \"Ternary content addressable memory and two-port static random access memory\" (US-11475952). https://patentable.app/patents/US-11475952","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11475952","json":"https://patentable.app/api/llm-context/US-11475952","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:29:43.584Z"}