{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476110","patent":{"patent_number":"US-11476110","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-01-21T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":4,"abstract":"A semiconductor device is made by: forming an ohmic electrode including Al on a semiconductor substrate; forming a SiN film covering the ohmic electrode; forming a first photoresist on the SiN film, the first photoresist having an opening pattern overlapping the ohmic electrode; performing ultraviolet curing of the first photoresist; forming an opening in the SiN film exposed through the opening pattern and causing a surface of the ohmic electrode to be exposed inside the opening; forming a barrier metal layer on the first photoresist and on the ohmic electrode exposed through the opening; forming a second photoresist in the opening pattern; performing a heat treatment on the second photoresist and covering the barrier metal layer overlapping the opening with the second photoresist; and etching the barrier metal layer using the second photoresist."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A semiconductor device is made by: forming an ohmic electrode including Al on a semiconductor substrate; forming a SiN film covering the ohmic electrode; forming a first photoresist on the SiN film, t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476110","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476110","citation_suggestion":"Patentable. \"Semiconductor device\" (US-11476110). https://patentable.app/patents/US-11476110","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476110","json":"https://patentable.app/api/llm-context/US-11476110","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:35:19.566Z"}