{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476114","patent":{"patent_number":"US-11476114","title":"Epitaxial growth process for semiconductor device and semiconductor device comprising epitaxial layer formed by adopting the same","assignee":null,"inventors":[],"filing_date":"2021-01-05T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"An epitaxial growth process for a semiconductor device includes providing a semiconductor substrate, forming a plurality of Dummy Gate structures on the surface of the semiconductor substrate, and forming grooves in a self-aligned manner on both sides of the Dummy Gate structures; forming an initial seed layer on the inner side surfaces of the grooves, the thickness of the formed initial seed layer on the bottoms of the grooves being greater and the thickness of the formed initial seed layer on the sidewalls being smaller since the growth speed of crystal faces <100> and <110> is different; longitudinally etching the initial seed layer to thin the bottom of the initial seed layer to form a seed layer; forming a main body layer on the seed layer, the main body layer filling the grooves; and forming a cover layer on the main body layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Epitaxial growth process for semiconductor device and semiconductor device comprising epitaxial layer formed by adopting the same","description":"An epitaxial growth process for a semiconductor device includes providing a semiconductor substrate, forming a plurality of Dummy Gate structures on the surface of the semiconductor substrate, and for","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476114","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476114","citation_suggestion":"Patentable. \"Epitaxial growth process for semiconductor device and semiconductor device comprising epitaxial layer formed by adopting the same\" (US-11476114). https://patentable.app/patents/US-11476114","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476114","json":"https://patentable.app/api/llm-context/US-11476114","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:17:26.168Z"}