{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476115","patent":{"patent_number":"US-11476115","title":"Compound semiconductor substrate comprising a SiC layer","assignee":null,"inventors":[],"filing_date":"2017-11-10T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":4,"abstract":"A method for manufacturing a compound semiconductor substrate comprises: a step to form an SiC (silicon carbide) layer on a Si (silicon) substrate, a step to form a LT (Low Temperature)-AlN (aluminum nitride) layer with a thickness of 12 nanometers or more and 100 nanometers or less on the SiC layer at 700 degrees Celsius or more and 1000 degrees Celsius or less, a step to form a HT (High Temperature)-AlN layer on the LT-AlN layer at a temperature higher than the temperature at which the LT-AlN layer was formed, a step to form an Al (aluminum) nitride semiconductor layer on the HT-AlN layer, a step to form a GaN (gallium nitride) layer on the Al nitride semiconductor layer, and a step to form an Al nitride semiconductor layer on the GaN layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Compound semiconductor substrate comprising a SiC layer","description":"A method for manufacturing a compound semiconductor substrate comprises: a step to form an SiC (silicon carbide) layer on a Si (silicon) substrate, a step to form a LT (Low Temperature)-AlN (aluminum ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476115","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476115","citation_suggestion":"Patentable. \"Compound semiconductor substrate comprising a SiC layer\" (US-11476115). https://patentable.app/patents/US-11476115","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476115","json":"https://patentable.app/api/llm-context/US-11476115","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:51:47.500Z"}