{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476166","patent":{"patent_number":"US-11476166","title":"Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers","assignee":null,"inventors":[],"filing_date":"2020-05-15T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device is provided. The device includes a first pair and a second pair of source/drain features over a semiconductor substrate. The first pair of source/drain features are p-type doped. The second pair of source/drain features are n-type doped. A first stack of semiconductor layers connect the first pair of source/drain features along a first direction. A second stack of semiconductor layers connect the second pair of source/drain features along a second direction. A first gate is between vertically adjacent layers of the first stack of semiconductor layers. The first gate has a first portion that has a first dimension along the first direction. A second gate is between vertically adjacent layers of the second stack of semiconductor layers. The second gate has a second portion that has a second dimension along the second direction. The second dimension is larger than the first dimension."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers","description":"A semiconductor device is provided. The device includes a first pair and a second pair of source/drain features over a semiconductor substrate. The first pair of source/drain features are p-type doped","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476166","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476166","citation_suggestion":"Patentable. \"Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers\" (US-11476166). https://patentable.app/patents/US-11476166","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476166","json":"https://patentable.app/api/llm-context/US-11476166","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:42:10.299Z"}