{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476181","patent":{"patent_number":"US-11476181","title":"3D semiconductor device and structure with metal layers","assignee":null,"inventors":[],"filing_date":"2022-06-27T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","B82Y","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A 3D semiconductor device including: a first level including a single crystal silicon layer and a plurality of first transistors each including a single crystal channel; a first metal layer overlaying the plurality of first transistors; a second metal layer overlaying the first metal layer; a third metal layer overlaying the second metal layer; a second level, where the second level overlays the first level and includes a plurality of second transistors; a fourth metal layer overlaying the second level; and a connective path between the fourth metal layer and either the third metal layer or the second metal layer, where the connective path includes a via disposed through the second level and has a diameter of less than 500 nm and greater than 5 nm, where the third metal layer is connected to provide a power or ground signal to at least one of the second transistors."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"3D semiconductor device and structure with metal layers","description":"A 3D semiconductor device including: a first level including a single crystal silicon layer and a plurality of first transistors each including a single crystal channel; a first metal layer overlaying","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476181","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476181","citation_suggestion":"Patentable. \"3D semiconductor device and structure with metal layers\" (US-11476181). https://patentable.app/patents/US-11476181","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476181","json":"https://patentable.app/api/llm-context/US-11476181","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:20:33.366Z"}