{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476192","patent":{"patent_number":"US-11476192","title":"Transistor structure in low noise amplifier","assignee":null,"inventors":[],"filing_date":"2020-01-05T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A semiconductor device includes: a first gate line and a second gate line extending only along a first direction, a third gate line and a fourth gate line extending along the first direction and between the first gate line and the second gate line, a fifth gate line and a sixth gate line extending along a second direction between the first gate line and the second gate line and intersecting the third gate line and the fourth gate line, and first contact plugs on the first gate line. Preferably, the first direction is perpendicular to the second direction and the first gate line and the second gate line are directly connected to the fifth gate line and the sixth gate line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistor structure in low noise amplifier","description":"A semiconductor device includes: a first gate line and a second gate line extending only along a first direction, a third gate line and a fourth gate line extending along the first direction and betwe","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476192","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476192","citation_suggestion":"Patentable. \"Transistor structure in low noise amplifier\" (US-11476192). https://patentable.app/patents/US-11476192","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476192","json":"https://patentable.app/api/llm-context/US-11476192","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:05:10.463Z"}