{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476196","patent":{"patent_number":"US-11476196","title":"Semiconductor device with multi-layer dielectric","assignee":null,"inventors":[],"filing_date":"2019-10-09T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a fin disposed over a substrate, a gate structure disposed over a channel region of the fin, such that the gate structure traverses source/drain regions of the fin, a device-level interlayer dielectric (ILD) layer of a multi-layer interconnect structure disposed over the substrate, wherein the device-level ILD layer includes a first dielectric layer, a second dielectric layer disposed over the first dielectric layer, and a third dielectric layer disposed over the second dielectric layer, wherein a material of the third dielectric layer is different than a material of the second dielectric layer and a material of the first dielectric layer. The semiconductor device further comprises a gate contact to the gate structure disposed in the device-level ILD layer and a source/drain contact to the source/drain regions disposed in the device-level ILD layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with multi-layer dielectric","description":"Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a fin disposed over a substrate, a gate structure disposed over a channel re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476196","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476196","citation_suggestion":"Patentable. \"Semiconductor device with multi-layer dielectric\" (US-11476196). https://patentable.app/patents/US-11476196","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476196","json":"https://patentable.app/api/llm-context/US-11476196","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:22:39.007Z"}