{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476269","patent":{"patent_number":"US-11476269","title":"Method for manufacturing 1.5T SONOS flash memory","assignee":null,"inventors":[],"filing_date":"2020-02-25T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":15,"abstract":"Embodiments described herein relate to a method for manufacturing a 1.5T SONOS flash memory. First, a first polysilicon gate layer is deposited and formed on a semiconductor substrate, then a formation area of a memory gate is defined on the first polysilicon gate layer, polysilicon in the formation area of the memory gate is etched away, and etching is stopped on a gate oxide layer. Next, an ONO layer and a second polysilicon gate layer are sequentially deposited, chemical mechanical polishing is performed on the second polysilicon gate layer, the ONO layer remaining on the top of the first polysilicon gate layer is cleaned away, and then gate structures of a logic device and a 1.5T SONOS device are formed at the same time."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing 1.5T SONOS flash memory","description":"Embodiments described herein relate to a method for manufacturing a 1.5T SONOS flash memory. First, a first polysilicon gate layer is deposited and formed on a semiconductor substrate, then a formatio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476269","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476269","citation_suggestion":"Patentable. \"Method for manufacturing 1.5T SONOS flash memory\" (US-11476269). https://patentable.app/patents/US-11476269","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476269","json":"https://patentable.app/api/llm-context/US-11476269","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:34:55.041Z"}