{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476334","patent":{"patent_number":"US-11476334","title":"Silicide structure of an integrated transistor device and method of providing same","assignee":null,"inventors":[],"filing_date":"2018-02-08T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":13,"abstract":"Techniques and mechanisms for providing functionality of a transistor which comprises a conformal layer of a gate work function silicide. In an embodiment, the transistor comprises a channel region and a gate dielectric which extends and adjoins the channel region. The gate dielectric also adjoins a layer structure of the transistor, the layer structure comprising a silicide. The silicide includes silicon and a component D which comprises a non-metal element from one of Groups IIIa, IVa, or Va. In another embodiment, the silicide further comprises a component M which includes a transition metal element from one of Groups IVb, Vb, VIb, VIIB, or VIIIb and/or which includes a metal element from one of Groups IIIa, IVa, or Va."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicide structure of an integrated transistor device and method of providing same","description":"Techniques and mechanisms for providing functionality of a transistor which comprises a conformal layer of a gate work function silicide. In an embodiment, the transistor comprises a channel region an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476334","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476334","citation_suggestion":"Patentable. \"Silicide structure of an integrated transistor device and method of providing same\" (US-11476334). https://patentable.app/patents/US-11476334","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476334","json":"https://patentable.app/api/llm-context/US-11476334","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:39:19.553Z"}