{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476343","patent":{"patent_number":"US-11476343","title":"High voltage transistor device and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2021-03-26T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A high-voltage transistor device includes a semiconductor substrate, an isolation structure, a gate dielectric layer, a gate, a source region and a drain region. The semiconductor substrate has a plurality of grooves extending downward from a surface of the semiconductor substrate to form a sawtooth sectional profile. The isolation structure is disposed on the outside of the plurality of grooves, and extends from the surface downwards into the semiconductor substrate to define a high-voltage area. The gate dielectric layer is disposed on the high-voltage area and partially filled in the plurality of grooves. The gate is disposed on the gate dielectric layer. The source region and the drain region are respectively disposed in the semiconductor substrate and isolated from each other."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High voltage transistor device and method for fabricating the same","description":"A high-voltage transistor device includes a semiconductor substrate, an isolation structure, a gate dielectric layer, a gate, a source region and a drain region. The semiconductor substrate has a plur","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476343","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476343","citation_suggestion":"Patentable. \"High voltage transistor device and method for fabricating the same\" (US-11476343). https://patentable.app/patents/US-11476343","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476343","json":"https://patentable.app/api/llm-context/US-11476343","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:20:12.949Z"}