{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476348","patent":{"patent_number":"US-11476348","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-01-19T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A manufacturing method of a semiconductor device includes the following steps. First patterned structures are formed on a substrate. Each of the first patterned structures includes a first semiconductor pattern and a first bottom protection pattern disposed between the first semiconductor pattern and the substrate. A first protection layer is formed on the first patterned structures and the substrate. A part of the first protection layer is located between the first patterned structures. A first opening is formed in the first protection layer between the first patterned structures. The first opening penetrates the first protection layer and exposes a part of the substrate. A first etching process is performed after forming the first opening. A part of the substrate under the first patterned structures is removed by the first etching process for suspending at least a part of each of the first patterned structures above the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A manufacturing method of a semiconductor device includes the following steps. First patterned structures are formed on a substrate. Each of the first patterned structures includes a first semiconduct","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476348","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476348","citation_suggestion":"Patentable. \"Semiconductor device\" (US-11476348). https://patentable.app/patents/US-11476348","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476348","json":"https://patentable.app/api/llm-context/US-11476348","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:19:24.945Z"}