{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476353","patent":{"patent_number":"US-11476353","title":"Lateral heterojunctions in two-dimensional materials integrated with multiferroic layers","assignee":null,"inventors":[],"filing_date":"2017-11-21T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["G01N","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Lateral heterojunctions in two-dimensional materials integrated with multiferroic layers","description":"The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476353","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476353","citation_suggestion":"Patentable. \"Lateral heterojunctions in two-dimensional materials integrated with multiferroic layers\" (US-11476353). https://patentable.app/patents/US-11476353","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476353","json":"https://patentable.app/api/llm-context/US-11476353","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:28:24.936Z"}