{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476361","patent":{"patent_number":"US-11476361","title":"Semiconductor device structure with dielectric layer","assignee":null,"inventors":[],"filing_date":"2020-12-14T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack includes a first dielectric layer, a work function layer, and a gate electrode sequentially stacked over the substrate, the first dielectric layer is between the work function layer and the substrate, the work function layer is between the first dielectric layer and the gate electrode, the first dielectric layer has a thin portion and a thick portion, the thin portion is thinner than the thick portion and surrounds the thick portion. The semiconductor device structure includes. The semiconductor device structure includes an insulating layer over the substrate and wrapping around the gate stack. The thin portion is between the thick portion and the insulating layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device structure with dielectric layer","description":"A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack inclu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476361","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476361","citation_suggestion":"Patentable. \"Semiconductor device structure with dielectric layer\" (US-11476361). https://patentable.app/patents/US-11476361","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476361","json":"https://patentable.app/api/llm-context/US-11476361","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:37:56.702Z"}