{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476365","patent":{"patent_number":"US-11476365","title":"Fin field effect transistor device structure and method for forming the same","assignee":null,"inventors":[],"filing_date":"2020-01-16T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a fin field effect transistor device structure includes forming a fin structure over a substrate. The method also includes forming a gate structure across the fin structure. The method also includes growing a source/drain epitaxial structure over the fin structure. The method also includes depositing a first dielectric layer surrounding the source/drain epitaxial structure. The method also includes forming a contact structure in the first dielectric layer over the source/drain epitaxial structure. The method also includes depositing a second dielectric layer over the first dielectric layer. The method also includes forming a hole in the second dielectric layer to expose the contact structure. The method also includes etching the contact structure to enlarge the hole in the contact structure. The method also includes filling the hole with a conductive material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field effect transistor device structure and method for forming the same","description":"A method for forming a fin field effect transistor device structure includes forming a fin structure over a substrate. The method also includes forming a gate structure across the fin structure. The m","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476365","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476365","citation_suggestion":"Patentable. \"Fin field effect transistor device structure and method for forming the same\" (US-11476365). https://patentable.app/patents/US-11476365","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476365","json":"https://patentable.app/api/llm-context/US-11476365","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:25:06.996Z"}