{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476413","patent":{"patent_number":"US-11476413","title":"Tunnel magnetoresistance effect device and magnetic device using same","assignee":null,"inventors":[],"filing_date":"2020-06-23T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["G11B","G11C"],"num_claims":21,"abstract":"A tunnel magnetoresistance effect (TMR) device includes an exchange coupling film having a first ferromagnetic layer, which is at least a portion of a fixed magnetic layer, and an antiferromagnetic layer laminated on the first ferromagnetic layer. The ferromagnetic layer includes an X(Cr—Mn) layer containing one or two or more elements X selected from the group consisting of the platinum group elements and Ni, and also containing Mn and Cr. The X(Cr—Mn) layer has a first region relatively near the first ferromagnetic layer, and a second region relatively far away from the first ferromagnetic layer, and the content of Mn in the first region is higher than that in the second region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Tunnel magnetoresistance effect device and magnetic device using same","description":"A tunnel magnetoresistance effect (TMR) device includes an exchange coupling film having a first ferromagnetic layer, which is at least a portion of a fixed magnetic layer, and an antiferromagnetic la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476413","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476413","citation_suggestion":"Patentable. \"Tunnel magnetoresistance effect device and magnetic device using same\" (US-11476413). https://patentable.app/patents/US-11476413","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476413","json":"https://patentable.app/api/llm-context/US-11476413","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:00:28.396Z"}