{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11476419","patent":{"patent_number":"US-11476419","title":"Method for manufacturing a semiconductor device including a low-k dielectric material layer","assignee":null,"inventors":[],"filing_date":"2020-05-15T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor device includes forming a first pattern structure having a first opening on a lower structure comprising a semiconductor substrate. The first pattern structure includes a stacked pattern and a first spacer layer covering at least a side surface of the stacked pattern. A first flowable material layer including a SiOCH material is formed on the first spacer layer to fill the first opening and cover an upper portion of the first pattern structure. A first curing process including supplying a gaseous ammonia catalyst into the first flowable material layer is performed on the first flowable material layer to form a first cured material layer that includes water. A second curing process is performed on the first cured material layer to form a first low-k dielectric material layer. The first low-k dielectric material layer is planarized to form a planarized first low-k dielectric material layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a semiconductor device including a low-k dielectric material layer","description":"A method for manufacturing a semiconductor device includes forming a first pattern structure having a first opening on a lower structure comprising a semiconductor substrate. The first pattern structu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11476419","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11476419","citation_suggestion":"Patentable. \"Method for manufacturing a semiconductor device including a low-k dielectric material layer\" (US-11476419). https://patentable.app/patents/US-11476419","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11476419","json":"https://patentable.app/api/llm-context/US-11476419","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:00:20.086Z"}