{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482267","patent":{"patent_number":"US-11482267","title":"Memory device","assignee":null,"inventors":[],"filing_date":"2021-05-26T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":5,"abstract":"A memory device includes a substrate including first and second regions, the first region having first wordlines and first bitlines, and the second region having second wordlines and second bitlines, a first memory cell array including first memory cells in the first region, the first memory cell array having volatility, and each of the first memory cells including a cell switch having a first channel region adjacent to a corresponding first wordline of the first wordlines, and a capacitor connected to the cell switch, and a second memory cell array including second memory cells in the second region, the second memory cell array having non-volatility, and each of the second memory cells including a second channel region adjacent to a corresponding second wordline of the second wordlines, and a ferroelectric layer between the corresponding second wordline of the second wordlines and the second channel region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device","description":"A memory device includes a substrate including first and second regions, the first region having first wordlines and first bitlines, and the second region having second wordlines and second bitlines, ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482267","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482267","citation_suggestion":"Patentable. \"Memory device\" (US-11482267). https://patentable.app/patents/US-11482267","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482267","json":"https://patentable.app/api/llm-context/US-11482267","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:25:33.505Z"}