{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482268","patent":{"patent_number":"US-11482268","title":"Leakage compensation for memory arrays","assignee":null,"inventors":[],"filing_date":"2021-07-28T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"Apparatuses and techniques for compensating for noise, such as a leakage current, in a memory array are described. Leakage currents may, for example, be introduced onto a digit line from unselected memory cells. In some cases, a compensation component may be coupled with the digit line during a first phase of a read operation, before the target memory cell has been coupled with the digit line. The compensation component may sample a current on the digit line and store a representation of the sampled current. During a second phase of the read operation, the target memory cell may be coupled with the digit line. During the second phase, the compensation component may compensate for leakage or other parasitic effects by outputting a current on the digit line during the read operation based on the stored representation of the sampled current."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Leakage compensation for memory arrays","description":"Apparatuses and techniques for compensating for noise, such as a leakage current, in a memory array are described. Leakage currents may, for example, be introduced onto a digit line from unselected me","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482268","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482268","citation_suggestion":"Patentable. \"Leakage compensation for memory arrays\" (US-11482268). https://patentable.app/patents/US-11482268","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482268","json":"https://patentable.app/api/llm-context/US-11482268","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:23:26.428Z"}