{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482269","patent":{"patent_number":"US-11482269","title":"Semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2021-03-12T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":6,"abstract":"A semiconductor memory device includes a first memory transistor, a first memory capacitor, and a control circuit connected to them. The first memory transistor includes a first gate electrode, a first semiconductor layer, and a first insulating film containing an insulating material. The first memory capacitor includes a first electrode, a second electrode, and a second insulating film containing the insulating material of the first insulating film. The control circuit is configured to perform a first program operation that supplies the first gate electrode with a first program voltage, a second program operation that supplies the first gate electrode with a second program voltage larger than the first program voltage, and a first read operation that supplies at least one of the first electrode or the second electrode with a voltage. The control circuit performs the first or the second program operation after performing the first read operation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device","description":"A semiconductor memory device includes a first memory transistor, a first memory capacitor, and a control circuit connected to them. The first memory transistor includes a first gate electrode, a firs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482269","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482269","citation_suggestion":"Patentable. \"Semiconductor memory device\" (US-11482269). https://patentable.app/patents/US-11482269","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482269","json":"https://patentable.app/api/llm-context/US-11482269","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:05:50.615Z"}