{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482279","patent":{"patent_number":"US-11482279","title":"SRAM cell, memory comprising the same, and electronic device","assignee":null,"inventors":[],"filing_date":"2019-10-31T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":30,"abstract":"A Static Random Access Memory (SRAM) cell that may include a first pull-up transistor, a second pull-up transistor, a first pull-down transistor, a second pull-down transistor, a first pass-gate transistor and a second pass-gate transistor provided at two levels on a substrate. The respective transistors may be vertical transistors. The first pull-up transistor and the second pull-up transistor may be provided at a first level, and the first pull-down transistor, the second pull-down transistor, the first pass-gate transistor and the second pass-gate transistor may be provided at a second level different from the first level. A region where the first pull-up transistor and the second pull-up transistor are located and a region where the first pull-down transistor, the second pull-down transistor, the first pass-gate transistor and the second pass-gate transistor are located may at least partially overlap in a vertical direction with respect to an upper surface of the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SRAM cell, memory comprising the same, and electronic device","description":"A Static Random Access Memory (SRAM) cell that may include a first pull-up transistor, a second pull-up transistor, a first pull-down transistor, a second pull-down transistor, a first pass-gate trans","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482279","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482279","citation_suggestion":"Patentable. \"SRAM cell, memory comprising the same, and electronic device\" (US-11482279). https://patentable.app/patents/US-11482279","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482279","json":"https://patentable.app/api/llm-context/US-11482279","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:06:12.595Z"}