{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482295","patent":{"patent_number":"US-11482295","title":"Testing magnetoresistive random access memory for low likelihood failure","assignee":null,"inventors":[],"filing_date":"2020-09-25T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":62,"abstract":"A Magnetoresistive Random Access Memory (MRAM) device is tested using a high repetition test that detects one or more low-likelihood failures, such as a failure to properly switch between a high or low resistive state. A series of write and read operations are performed for a large number of test cycles at high frequency. A first tier measurement is used to determine if a switching failure occurred, e.g. by comparing the read signal to target level(s) after each operation. When a switching failure event is detected, a second tier measurement is used to measure and store switching performance parameters, for example, the value of the read signal, while the MRAM device is in a failure state. The high frequency testing may be paused during the second tier measurements. Additional performance parameters may be measured during the second tier measurements."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Testing magnetoresistive random access memory for low likelihood failure","description":"A Magnetoresistive Random Access Memory (MRAM) device is tested using a high repetition test that detects one or more low-likelihood failures, such as a failure to properly switch between a high or lo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482295","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482295","citation_suggestion":"Patentable. \"Testing magnetoresistive random access memory for low likelihood failure\" (US-11482295). https://patentable.app/patents/US-11482295","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482295","json":"https://patentable.app/api/llm-context/US-11482295","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:05:14.471Z"}