{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482423","patent":{"patent_number":"US-11482423","title":"Plasma etching techniques","assignee":null,"inventors":[],"filing_date":"2021-01-28T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","B82Y","B82Y"],"num_claims":20,"abstract":"In certain embodiments, a method for processing a semiconductor substrate includes receiving a semiconductor substrate that includes a film stack. The film stack includes first and second germanium-containing layers and a first silicon layer positioned between the first and second germanium-containing layers. The method includes selectively etching the first silicon layer by exposing the film stack to a plasma that includes fluorine agents and nitrogen agents. The plasma etches the first silicon layer, and causes a passivation layer to be formed on exposed surfaces of the first and second germanium-containing layers to inhibit etching of the first and second germanium-containing layers during exposure of the film stack to the plasma."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Plasma etching techniques","description":"In certain embodiments, a method for processing a semiconductor substrate includes receiving a semiconductor substrate that includes a film stack. The film stack includes first and second germanium-co","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482423","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482423","citation_suggestion":"Patentable. \"Plasma etching techniques\" (US-11482423). https://patentable.app/patents/US-11482423","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482423","json":"https://patentable.app/api/llm-context/US-11482423","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:46:05.524Z"}