{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482445","patent":{"patent_number":"US-11482445","title":"Method for manufacturing semiconductor structure","assignee":null,"inventors":[],"filing_date":"2021-06-10T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"The present disclosure provides a method for manufacturing a semiconductor structure having different filling layers. The method includes forming a multi-layer stack in a semiconductor substrate, wherein the multi-layer stack has a first filling layer and a second layer, the semiconductor substrate has two through vias, and two top portions of the multi-layer stack are respectively exposed through the two through vias. The method further includes recessing the multi-layer stack from the two through vias to respectively form two blind holes in the first filling layer and the second filling layer; selectively etching the second filling layer to form a global cavity between the two blind holes; filling the global cavity and the two blind holes with dielectric filling material to form an air void in the multi-layer stack; and forming a switch device over the semiconductor substrate, wherein the air void is formed under the switch device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor structure","description":"The present disclosure provides a method for manufacturing a semiconductor structure having different filling layers. The method includes forming a multi-layer stack in a semiconductor substrate, wher","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482445","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482445","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor structure\" (US-11482445). https://patentable.app/patents/US-11482445","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482445","json":"https://patentable.app/api/llm-context/US-11482445","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:11:58.318Z"}