{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482452","patent":{"patent_number":"US-11482452","title":"Method of forming a contact plug in a semiconductor integrated circuit device","assignee":null,"inventors":[],"filing_date":"2020-12-24T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"In a method of forming a contact plug in a semiconductor integrated circuit device, the contact plug may be formed in a process chamber of a substrate-processing apparatus. The process chamber may have a process space. The process chamber may include a substrate supporter placed in a lower region of the process space to support a semiconductor substrate, and a gas injector placed in an upper region of the process space to inject a gas to the semiconductor substrate. An insulating interlayer having a contact hole may be formed on the semiconductor substrate loaded into the process space. A nucleation layer may be formed on an inner surface of the contact hole and an upper surface of the insulating interlayer. A semi-bulk layer may be formed on the nucleation layer in a lower region of the contact hole. An inhibiting layer may be formed on the semi-bulk layer and the exposed nucleation layer. A main-bulk layer may be formed on the semi-bulk layer to fill the contact hole with the main-bulk layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming a contact plug in a semiconductor integrated circuit device","description":"In a method of forming a contact plug in a semiconductor integrated circuit device, the contact plug may be formed in a process chamber of a substrate-processing apparatus. The process chamber may hav","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482452","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482452","citation_suggestion":"Patentable. \"Method of forming a contact plug in a semiconductor integrated circuit device\" (US-11482452). https://patentable.app/patents/US-11482452","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482452","json":"https://patentable.app/api/llm-context/US-11482452","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:19:07.258Z"}