{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482454","patent":{"patent_number":"US-11482454","title":"Methods for forming self-aligned contacts using spin-on silicon carbide","assignee":null,"inventors":[],"filing_date":"2021-02-17T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods and improved process flows are provided herein for forming self-aligned contacts using spin-on silicon carbide (SiC). More specifically, the disclosed methods and process flows form self-aligned contacts by using spin-on SiC as a cap layer for at least one other structure, instead of depositing a SiC layer via plasma vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. The other structure may be a source and drain contact made through the use of a trench conductor. By utilizing spin-on SiC as a cap layer material, the disclosed methods and process flows avoid problems that typically occur when SiC is deposited, for example by CVD, and subsequently planarized. As such, the disclosed methods and process flows improve upon conventional methods and process flows for forming self-aligned contacts by reducing defectivity and improving yield."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for forming self-aligned contacts using spin-on silicon carbide","description":"Methods and improved process flows are provided herein for forming self-aligned contacts using spin-on silicon carbide (SiC). More specifically, the disclosed methods and process flows form self-align","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482454","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482454","citation_suggestion":"Patentable. \"Methods for forming self-aligned contacts using spin-on silicon carbide\" (US-11482454). https://patentable.app/patents/US-11482454","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482454","json":"https://patentable.app/api/llm-context/US-11482454","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:38:00.493Z"}