{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482456","patent":{"patent_number":"US-11482456","title":"Forming two portion spacer after metal gate and contact formation, and related IC structure","assignee":null,"inventors":[],"filing_date":"2019-03-21T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A method of forming an IC structure includes providing a metal gate structure, a spacer adjacent the metal gate structure and a contact to each of a pair of source/drain regions adjacent sides of the spacer. The spacer includes a first dielectric having a first dielectric constant. The metal gate structure is recessed, and the spacer is recessed to have an upper surface of the first dielectric below an upper surface of the metal gate structure, leaving a lower spacer portion. An upper spacer portion of a second dielectric having a dielectric constant lower than the first dielectric is formed over the lower spacer portion. A gate cap is formed over the metal gate structure and the upper spacer portion. The second dielectric can include, for example, an oxide or a gas. The method may reduce effective capacitance and gate height loss, and improve gate-to-contact short margin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Forming two portion spacer after metal gate and contact formation, and related IC structure","description":"A method of forming an IC structure includes providing a metal gate structure, a spacer adjacent the metal gate structure and a contact to each of a pair of source/drain regions adjacent sides of the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482456","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482456","citation_suggestion":"Patentable. \"Forming two portion spacer after metal gate and contact formation, and related IC structure\" (US-11482456). https://patentable.app/patents/US-11482456","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482456","json":"https://patentable.app/api/llm-context/US-11482456","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:43:41.864Z"}