{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482474","patent":{"patent_number":"US-11482474","title":"Forming a self-aligned TSV with narrow opening in horizontal isolation layer interfacing substrate","assignee":null,"inventors":[],"filing_date":"2020-09-27T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A semiconductor device and method of manufacturing thereof are provided. The semiconductor device includes a substrate, a first dielectric layer, an isolation layer, a conductor and a liner layer. The substrate has a top surface and a bottom surface opposite the top surface. The first dielectric layer is on the bottom surface of the substrate, in which the first dielectric layer comprises an interconnect structure disposed therein. The isolation layer is on the top surface of the substrate. The conductor is disposed in the substrate and covers a portion of the isolation layer, in which the conductor includes a first portion connected to the interconnect structure and a second portion on the first portion, in which the first portion has a width greater than a width of the second portion. The liner layer is disposed between the substrate and the conductor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Forming a self-aligned TSV with narrow opening in horizontal isolation layer interfacing substrate","description":"A semiconductor device and method of manufacturing thereof are provided. The semiconductor device includes a substrate, a first dielectric layer, an isolation layer, a conductor and a liner layer. The","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482474","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482474","citation_suggestion":"Patentable. \"Forming a self-aligned TSV with narrow opening in horizontal isolation layer interfacing substrate\" (US-11482474). https://patentable.app/patents/US-11482474","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482474","json":"https://patentable.app/api/llm-context/US-11482474","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:58:56.716Z"}