{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482495","patent":{"patent_number":"US-11482495","title":"Semiconductor arrangement and method for making","assignee":null,"inventors":[],"filing_date":"2019-11-13T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for fabricating a semiconductor arrangement includes removing a portion of a first dielectric layer to form a first recess defined by sidewalls of the first dielectric layer, forming a first conductive layer in the first recess, removing a portion of the first conductive layer to form a second recess defined by the sidewalls of the first dielectric layer, forming a second conductive layer in the second recess, where the second conductive layer contacts the first conductive layer, forming a second dielectric layer over the second conductive layer, removing a portion of the second dielectric layer to form a third recess defined by sidewalls of the second dielectric layer, where the second conductive layer is exposed through the third recess, and forming a third conductive layer in the third recess, where the third conductive layer contacts the second conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor arrangement and method for making","description":"A method for fabricating a semiconductor arrangement includes removing a portion of a first dielectric layer to form a first recess defined by sidewalls of the first dielectric layer, forming a first ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482495","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482495","citation_suggestion":"Patentable. \"Semiconductor arrangement and method for making\" (US-11482495). https://patentable.app/patents/US-11482495","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482495","json":"https://patentable.app/api/llm-context/US-11482495","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:15:45.915Z"}