{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482543","patent":{"patent_number":"US-11482543","title":"Radio frequency (RF) amplifier device on silicon-on-insulator (SOI) and method for fabricating thereof","assignee":null,"inventors":[],"filing_date":"2021-02-19T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"Existing semiconductor transistor processes may be leveraged to form lateral extensions adjacent to a conventional gate structure. The dielectric thickness under these lateral gate extensions can be varied to tune device performance and enable higher cut-off frequencies without compromising resistance to breakdown at high operating voltages. These extensions may be patterned with dimensions that are not limited by lithographic resolution and overlay capabilities and are compatible with conventional processing for ease of integration with other devices. The lateral extensions and dielectric spacers may be used to form self-aligned source, drain, and channel regions. A narrow-highly-doped channel may be formed under a narrow gate extension to improve operating frequencies. A thick dielectric layer may be formed under a narrow extension gate to improve operation voltage range. The present invention provides an innovative structure with lateral gate extensions which may be referred to as EGMOS (extended gate metal oxide semiconductor)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Radio frequency (RF) amplifier device on silicon-on-insulator (SOI) and method for fabricating thereof","description":"Existing semiconductor transistor processes may be leveraged to form lateral extensions adjacent to a conventional gate structure. The dielectric thickness under these lateral gate extensions can be v","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482543","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482543","citation_suggestion":"Patentable. \"Radio frequency (RF) amplifier device on silicon-on-insulator (SOI) and method for fabricating thereof\" (US-11482543). https://patentable.app/patents/US-11482543","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482543","json":"https://patentable.app/api/llm-context/US-11482543","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:22:28.325Z"}