{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482570","patent":{"patent_number":"US-11482570","title":"Methods of forming magnetoresistive devices and integrated circuits","assignee":null,"inventors":[],"filing_date":"2020-12-28T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry. In some embodiments, the magnetoresistive device structures are designed such that the devices are able to fit within the vertical dimensions of the integrated circuit associated with a single metal layer and a single layer of interlayer dielectric material. Integrating the processing for the magnetoresistive devices can include using the same standard interlayer dielectric material as used in the surrounding circuits on the integrated circuit as well as using standard vias to interconnect to at least one of the electrodes of the magnetoresistive devices."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming magnetoresistive devices and integrated circuits","description":"Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482570","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482570","citation_suggestion":"Patentable. \"Methods of forming magnetoresistive devices and integrated circuits\" (US-11482570). https://patentable.app/patents/US-11482570","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482570","json":"https://patentable.app/api/llm-context/US-11482570","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:33:45.676Z"}