{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482572","patent":{"patent_number":"US-11482572","title":"Semiconductor memory device with resistance change memory element and manufacturing method of semiconductor memory device with resistance change memory element","assignee":null,"inventors":[],"filing_date":"2020-08-26T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A semiconductor memory device has a first wiring extending in a first direction and a second wiring extending in a second direction. The first and second wirings are spaced from each other in a third direction. The second wiring has a first recess facing the first wiring. A resistance change memory element is connected between the first and second wirings. A conductive layer is between the resistance change memory element and the second wiring and includes a first protrusion facing the second wiring. A switching portion is between the conductive layer and the second wiring and includes a second recess facing the conductive layer and a second protrusion facing the second wiring. The first protrusion is in the second recess. The second protrusion is in the first recess. The switching portion is configured to switch conductivity state according to voltage between the first wiring and the second wiring."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device with resistance change memory element and manufacturing method of semiconductor memory device with resistance change memory element","description":"A semiconductor memory device has a first wiring extending in a first direction and a second wiring extending in a second direction. The first and second wirings are spaced from each other in a third ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482572","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482572","citation_suggestion":"Patentable. \"Semiconductor memory device with resistance change memory element and manufacturing method of semiconductor memory device with resistance change memory element\" (US-11482572). https://patentable.app/patents/US-11482572","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482572","json":"https://patentable.app/api/llm-context/US-11482572","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:00:14.684Z"}