{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482603","patent":{"patent_number":"US-11482603","title":"Semiconductor device and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2020-09-18T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device and a method for forming the semiconductor device are provided. The method includes providing a substrate; forming a fin on the substrate, where the substrate includes a fin dense region and a fin sparse region; forming a gate structure across the fin over the substrate; forming a source-drain doped layer in the fin on both sides of the gate structure; forming a dielectric layer over the substrate, where the dielectric layer covers a top of the gate structure; and forming a first through-hole in the dielectric layer on a side of the gate structure in the fin sparse region, where a bottom of the first through-hole exposes a top sidewall of the gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and fabrication method thereof","description":"A semiconductor device and a method for forming the semiconductor device are provided. The method includes providing a substrate; forming a fin on the substrate, where the substrate includes a fin den","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482603","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482603","citation_suggestion":"Patentable. \"Semiconductor device and fabrication method thereof\" (US-11482603). https://patentable.app/patents/US-11482603","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482603","json":"https://patentable.app/api/llm-context/US-11482603","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T12:31:21.993Z"}