{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11482622","patent":{"patent_number":"US-11482622","title":"Adhesion structure for thin film transistor","assignee":null,"inventors":[],"filing_date":"2018-12-10T00:00:00.000Z","publication_date":"2022-10-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":22,"abstract":"A transistor structure includes a layer of active material on a base. The base can be insulator material in some cases. The layer has a channel region between a source region and a drain region. A gate structure is in contact with the channel region and includes a gate electrode and a gate dielectric, where the gate dielectric is between the gate electrode and the active material. An electrical contact is on one or both of the source region and the drain region. The electrical contact has a larger portion in contact with a top surface of the active material and a smaller portion extending through the layer of active material into the base. The active material may be, for example, a transition metal dichalcogenide (TMD) in some embodiments."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Adhesion structure for thin film transistor","description":"A transistor structure includes a layer of active material on a base. The base can be insulator material in some cases. The layer has a channel region between a source region and a drain region. A gat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11482622","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11482622","citation_suggestion":"Patentable. \"Adhesion structure for thin film transistor\" (US-11482622). https://patentable.app/patents/US-11482622","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11482622","json":"https://patentable.app/api/llm-context/US-11482622","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:00:18.688Z"}