{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11487205","patent":{"patent_number":"US-11487205","title":"Semiconductor element intermediate, composition for forming metal-containing film, method of producing semiconductor element intermediate, and method of producing semiconductor element","assignee":null,"inventors":[],"filing_date":"2018-11-13T00:00:00.000Z","publication_date":"2022-11-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":21,"abstract":"Provided are a semiconductor element intermediate including: a substrate and a multilayer resist layer, in which the multilayer resist layer includes a metal-containing film, and in which the metal-containing film has a content of germanium element of 20 atm % or more, or a total content of tin element, indium element, and gallium element of 1 atm % or more, as measured by X-ray photoelectric spectroscopy, and an application of the semiconductor intermediate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor element intermediate, composition for forming metal-containing film, method of producing semiconductor element intermediate, and method of producing semiconductor element","description":"Provided are a semiconductor element intermediate including: a substrate and a multilayer resist layer, in which the multilayer resist layer includes a metal-containing film, and in which the metal-co","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11487205","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11487205","citation_suggestion":"Patentable. \"Semiconductor element intermediate, composition for forming metal-containing film, method of producing semiconductor element intermediate, and method of producing semiconductor element\" (US-11487205). https://patentable.app/patents/US-11487205","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11487205","json":"https://patentable.app/api/llm-context/US-11487205","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:12:58.624Z"}