{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11488656","patent":{"patent_number":"US-11488656","title":"Write techniques for a memory device with a charge transfer device","assignee":null,"inventors":[],"filing_date":"2021-01-25T00:00:00.000Z","publication_date":"2022-11-01T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"Techniques are provided for writing a high-level state to a memory cell capable of storing three or more logic states. After a sense operation performed by a first sense component and a second sense component, a digit line may be isolated from the first sense component and the second sense component. The high-level state may be stored in the memory cell, then a second state may be stored in the memory cell, in which the second state may be a mid-level state or a low-level state. The second state may be stored based on a write-back component identifying that the second state was stored in the memory cell before the write back procedure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Write techniques for a memory device with a charge transfer device","description":"Techniques are provided for writing a high-level state to a memory cell capable of storing three or more logic states. After a sense operation performed by a first sense component and a second sense c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11488656","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11488656","citation_suggestion":"Patentable. \"Write techniques for a memory device with a charge transfer device\" (US-11488656). https://patentable.app/patents/US-11488656","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11488656","json":"https://patentable.app/api/llm-context/US-11488656","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:18:09.305Z"}