{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11488821","patent":{"patent_number":"US-11488821","title":"Film forming method and crystalline multilayer structure","assignee":null,"inventors":[],"filing_date":"2019-06-21T00:00:00.000Z","publication_date":"2022-11-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":25,"abstract":"The disclosure provides a film forming method that enables to obtain an epitaxial film with reduced defects such as dislocations due to a reduced facet growth industrially advantageously, even if the epitaxial film has a corundum structure. When forming an epitaxial film on a crystal-growth surface of a corundum-structured crystal substrate directly or via another layer, using the crystal substrate having an uneven portion on the crystal-growth surface of the crystal substrate, generating and floating atomized droplets by atomizing a raw material solution including a metal; carrying the floated atomized droplets onto a surface of the crystal substrate by using a carrier gas; and causing a thermal reaction of the atomized droplets in a condition of a supply rate limiting state."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Film forming method and crystalline multilayer structure","description":"The disclosure provides a film forming method that enables to obtain an epitaxial film with reduced defects such as dislocations due to a reduced facet growth industrially advantageously, even if the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11488821","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11488821","citation_suggestion":"Patentable. \"Film forming method and crystalline multilayer structure\" (US-11488821). https://patentable.app/patents/US-11488821","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11488821","json":"https://patentable.app/api/llm-context/US-11488821","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:54:42.824Z"}