{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11488837","patent":{"patent_number":"US-11488837","title":"Method for fabricating high-voltage (HV) transistor","assignee":null,"inventors":[],"filing_date":"2020-09-23T00:00:00.000Z","publication_date":"2022-11-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method for fabricating a high-voltage (HV) transistor is provided. The method includes providing a substrate, having a first isolation structure and a second isolation structure in the substrate and a recess in the substrate between the first and second isolation structures. Further, a hydrogen annealing process is performed over the recess. A sacrificial dielectric layer is formed on the recess. The sacrificial dielectric layer is removed, wherein a portion of the first and second isolation structures is also removed. A gate oxide layer is formed in the recess between the first and second isolation structures after the hydrogen annealing process."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating high-voltage (HV) transistor","description":"A method for fabricating a high-voltage (HV) transistor is provided. The method includes providing a substrate, having a first isolation structure and a second isolation structure in the substrate and","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11488837","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11488837","citation_suggestion":"Patentable. \"Method for fabricating high-voltage (HV) transistor\" (US-11488837). https://patentable.app/patents/US-11488837","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11488837","json":"https://patentable.app/api/llm-context/US-11488837","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T12:46:19.078Z"}