{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11488905","patent":{"patent_number":"US-11488905","title":"Semiconductor device structure with manganese-containing conductive plug and method for forming the same","assignee":null,"inventors":[],"filing_date":"2020-12-08T00:00:00.000Z","publication_date":"2022-11-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"The present disclosure provides a semiconductor device structure with a manganese-containing conductive plug and a method for forming the semiconductor device structure. The semiconductor device structure includes a first conductive layer disposed over a semiconductor substrate, and a dielectric layer disposed over the first conductive layer. The semiconductor device structure also includes a first conductive plug penetrating through the dielectric layer and in a pattern-dense region, and a lining layer covering the dielectric layer and the first conductive plug. The lining layer and the first conductive plug include manganese. The semiconductor device structure further includes a second conductive plug penetrating through the lining layer and the dielectric layer and in a pattern-loose region. The second conductive plug is separated from the dielectric layer by a portion of the lining layer. In addition, the semiconductor device structure includes a second conductive layer covering the lining layer and the second conductive plug."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device structure with manganese-containing conductive plug and method for forming the same","description":"The present disclosure provides a semiconductor device structure with a manganese-containing conductive plug and a method for forming the semiconductor device structure. The semiconductor device struc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11488905","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11488905","citation_suggestion":"Patentable. \"Semiconductor device structure with manganese-containing conductive plug and method for forming the same\" (US-11488905). https://patentable.app/patents/US-11488905","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11488905","json":"https://patentable.app/api/llm-context/US-11488905","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:24:30.276Z"}