{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11488923","patent":{"patent_number":"US-11488923","title":"High reliability semiconductor devices and methods of fabricating the same","assignee":null,"inventors":[],"filing_date":"2019-05-24T00:00:00.000Z","publication_date":"2022-11-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":33,"abstract":"A semiconductor device package includes a substrate, a silicon (Si) or silicon carbide (SiC) semiconductor die, and a metal layer on a surface of the semiconductor die. The metal layer includes a bonding surface that is attached to a surface of the substrate by a die attach material. The bonding surface includes opposing edges that extend along a perimeter of the semiconductor die, and one or more non-orthogonal corners that are configured to reduce stress at an interface between the bonding surface and the die attach material. Related devices and fabrication methods are also discussed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High reliability semiconductor devices and methods of fabricating the same","description":"A semiconductor device package includes a substrate, a silicon (Si) or silicon carbide (SiC) semiconductor die, and a metal layer on a surface of the semiconductor die. The metal layer includes a bond","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11488923","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11488923","citation_suggestion":"Patentable. \"High reliability semiconductor devices and methods of fabricating the same\" (US-11488923). https://patentable.app/patents/US-11488923","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11488923","json":"https://patentable.app/api/llm-context/US-11488923","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:25:13.800Z"}