{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11488952","patent":{"patent_number":"US-11488952","title":"Semiconductor device including self-aligned contact and method of manufacturing the semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-05-29T00:00:00.000Z","publication_date":"2022-11-01T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device according to some embodiments of the disclosure may include a fin type active pattern extending in a first direction, a plurality of gate structures on the fin type active pattern and extending in a second direction different from the first direction, a plurality of inter-contact insulation patterns on respective ones of the plurality of gate structures, a plurality of interlayer insulation layers on side surfaces of the plurality of gate structures, and a plurality of contact plugs respectively between pairs of the plurality of gate structures. The fin type active pattern may include a plurality of source/drains. Lower ends of the plurality of contact plugs may contact the plurality of source/drains. The plurality of gate structures may each include a first gate metal, a second gate metal, a gate capping layer, a gate insulation layer, a first spacer, and a second spacer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including self-aligned contact and method of manufacturing the semiconductor device","description":"A semiconductor device according to some embodiments of the disclosure may include a fin type active pattern extending in a first direction, a plurality of gate structures on the fin type active patte","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11488952","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11488952","citation_suggestion":"Patentable. \"Semiconductor device including self-aligned contact and method of manufacturing the semiconductor device\" (US-11488952). https://patentable.app/patents/US-11488952","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11488952","json":"https://patentable.app/api/llm-context/US-11488952","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:06:19.980Z"}