{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11488963","patent":{"patent_number":"US-11488963","title":"Method of forming a semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-08-18T00:00:00.000Z","publication_date":"2022-11-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method including forming a first member having a first portion including a plurality of storage capacitors therein and a second portion surrounding the first portion; forming a second member of a concave shape having a third portion, which corresponds to a lower top surface of the concave shape, including a plurality of access transistors provided correspondingly to the plurality of storage capacitors therein and a fourth portion, which corresponds to an upper top surface of the concave shape, surrounding the third portion; stacking the first member on the second member to physically connect the second and fourth portions and have a gap between the first and third portions; cutting the first member to physically separate the first portion from the second portion; and joining the separated first portion and the third portion with filling the gap therebetween."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming a semiconductor device","description":"A method including forming a first member having a first portion including a plurality of storage capacitors therein and a second portion surrounding the first portion; forming a second member of a co","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11488963","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11488963","citation_suggestion":"Patentable. \"Method of forming a semiconductor device\" (US-11488963). https://patentable.app/patents/US-11488963","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11488963","json":"https://patentable.app/api/llm-context/US-11488963","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:49:05.566Z"}