{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11488967","patent":{"patent_number":"US-11488967","title":"Eight-transistor static random access memory cell","assignee":null,"inventors":[],"filing_date":"2021-03-25T00:00:00.000Z","publication_date":"2022-11-01T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"Disclosed are memory structure embodiments including a memory cell and, particularly, an eight-transistor (8T) static random access memory (SRAM) cell with high device density and symmetry. In the 8T SRAM cell, an isolation region is positioned laterally between two semiconductor bodies. Four gate structures traverse the semiconductor bodies. Four p-type transistors, including two p-type pass-gate transistors and two pull-up transistors between the p-type pass-gate transistors, are on one semiconductor body. Four n-type transistors, including two n-type pass-gate transistors and two pull-down transistors between the n-type pass-gate transistors, are on the other. Adjacent p-type and n-type transistors on the different semiconductor bodies share a gate structure. Various interconnects (including, but not limited to, silicide bridges and/or contact straps) provide the internal and electrical connections required for making the 8T SRAM cell operational and for incorporating the 8T SRAM cell into an array of such cells."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Eight-transistor static random access memory cell","description":"Disclosed are memory structure embodiments including a memory cell and, particularly, an eight-transistor (8T) static random access memory (SRAM) cell with high device density and symmetry. In the 8T ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11488967","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11488967","citation_suggestion":"Patentable. \"Eight-transistor static random access memory cell\" (US-11488967). https://patentable.app/patents/US-11488967","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11488967","json":"https://patentable.app/api/llm-context/US-11488967","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T12:45:01.462Z"}