{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11488976","patent":{"patent_number":"US-11488976","title":"Semiconductor memory device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2020-12-15T00:00:00.000Z","publication_date":"2022-11-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":3,"abstract":"A method for manufacturing a semiconductor memory device may include: forming a pre-stack by alternately stacking a plurality of first dielectric layers and a plurality of second dielectric layers over a substrate which has a cell area and a connection area; forming a plurality of slits which pass through the pre-stack, such that a distance between the slits in the connection area is larger than a distance between the slits in the cell area; removing the second dielectric layers in the cell area and in a periphery of the connection area adjacent to the slits while leaving the second dielectric layer in a center of the connection area by injecting an etching solution for removing the second dielectric layers, through the slits; and forming electrode layers in spaces from which the second dielectric layers are removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device and manufacturing method thereof","description":"A method for manufacturing a semiconductor memory device may include: forming a pre-stack by alternately stacking a plurality of first dielectric layers and a plurality of second dielectric layers ove","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11488976","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11488976","citation_suggestion":"Patentable. \"Semiconductor memory device and manufacturing method thereof\" (US-11488976). https://patentable.app/patents/US-11488976","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11488976","json":"https://patentable.app/api/llm-context/US-11488976","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:46:43.266Z"}