{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11489057","patent":{"patent_number":"US-11489057","title":"Contact structures in semiconductor devices","assignee":null,"inventors":[],"filing_date":"2021-01-07T00:00:00.000Z","publication_date":"2022-11-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes first and second gate structures disposed on first and second fin structures, first and second source/drain (S/D) regions disposed on the first and second fin structures, first and second contact structures disposed on the first and second S/D regions, and a dipole layer disposed at an interface between the first nWFM silicide layer and the first S/D region. The first contact structure includes a first nWFM silicide layer disposed on the first S/D region and a first contact plug disposed on the first nWFM silicide layer. The second contact structure includes a pWFM silicide layer disposed on the second S/D region, a second nWFM silicide layer disposed on the pWFM silicide layer, and a second contact plug disposed on the pWFM silicide layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Contact structures in semiconductor devices","description":"A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes first and second gate structures dispos","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11489057","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11489057","citation_suggestion":"Patentable. \"Contact structures in semiconductor devices\" (US-11489057). https://patentable.app/patents/US-11489057","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11489057","json":"https://patentable.app/api/llm-context/US-11489057","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:45:28.166Z"}