{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11489062","patent":{"patent_number":"US-11489062","title":"Optimized proximity profile for strained source/drain feature and method of fabricating thereof","assignee":null,"inventors":[],"filing_date":"2020-05-06T00:00:00.000Z","publication_date":"2022-11-01T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Source and drain formation techniques are disclosed herein. An exemplary three-step etch method for forming a source/drain recess in a source/drain region of a fin includes a first anisotropic etch, an isotropic etch, and a second anisotropic etch. The first anisotropic etch and the isotropic etch are tuned to define a location of a source/drain tip. A depth of the source/drain recess after the first anisotropic etch and the isotropic etch is less than a target depth. The second anisotropic etch is tuned to extend the depth of the source/drain recess to the target depth. The source/drain tip is near a top of the fin while a bottom portion of the source/drain recess is spaced a distance from a gate footing. The source/drain recess is filled with an epitaxial semiconductor material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Optimized proximity profile for strained source/drain feature and method of fabricating thereof","description":"Source and drain formation techniques are disclosed herein. An exemplary three-step etch method for forming a source/drain recess in a source/drain region of a fin includes a first anisotropic etch, a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11489062","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11489062","citation_suggestion":"Patentable. \"Optimized proximity profile for strained source/drain feature and method of fabricating thereof\" (US-11489062). https://patentable.app/patents/US-11489062","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11489062","json":"https://patentable.app/api/llm-context/US-11489062","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:42:52.890Z"}