{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11489106","patent":{"patent_number":"US-11489106","title":"Method of plasma etching","assignee":null,"inventors":[],"filing_date":"2020-11-23T00:00:00.000Z","publication_date":"2022-11-01T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"A structure comprising a semiconductor substrate and a layer of PZT (lead zirconate titanate) is etched by performing a first plasma etch step with a first etch process gas mixture. The first etch process gas mixture comprises at least one fluorine containing species. The first plasma etch step is performed so that involatile metal etch products are deposited onto interior surfaces of the chamber. The structure is further etched by performing a second plasma etch step with a second etch process gas mixture. The second etch process gas mixture comprises at least one fluorocarbon species. The second plasma etch step is performed so that a fluorocarbon polymer layer is deposited onto interior surfaces of the chamber to overlay involatile metal etch products deposited in the first plasma etch step and to provide a substrate on which further involatile metal etch products can be deposited."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of plasma etching","description":"A structure comprising a semiconductor substrate and a layer of PZT (lead zirconate titanate) is etched by performing a first plasma etch step with a first etch process gas mixture. The first etch pro","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11489106","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11489106","citation_suggestion":"Patentable. \"Method of plasma etching\" (US-11489106). https://patentable.app/patents/US-11489106","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11489106","json":"https://patentable.app/api/llm-context/US-11489106","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T19:17:01.398Z"}