{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11489109","patent":{"patent_number":"US-11489109","title":"Magnetoresistive effect element and magnetic memory","assignee":null,"inventors":[],"filing_date":"2020-11-19T00:00:00.000Z","publication_date":"2022-11-01T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":19,"abstract":"A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetoresistive effect element and magnetic memory","description":"A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnet","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11489109","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11489109","citation_suggestion":"Patentable. \"Magnetoresistive effect element and magnetic memory\" (US-11489109). https://patentable.app/patents/US-11489109","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11489109","json":"https://patentable.app/api/llm-context/US-11489109","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:13:16.060Z"}