{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11493850","patent":{"patent_number":"US-11493850","title":"Lithography method using multi-scale simulation, semiconductor device manufacturing method and exposure equipment","assignee":null,"inventors":[],"filing_date":"2019-10-04T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["G05B","H01L","G05B"],"num_claims":15,"abstract":"There are provided a lithography method capable of selecting best resist and a semiconductor device manufacturing method and exposure equipment based on the lithography method. The lithography method includes estimating a shape of a virtual resist pattern based on a multi-scale simulation for resist, forming a test resist pattern by performing exposure on selected resist based on the simulation result, comparing the test resist pattern with the virtual resist pattern, and forming a resist pattern on an object to be patterned by using the resist when an error between the test resist pattern and the virtual resist pattern is in an allowable range."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Lithography method using multi-scale simulation, semiconductor device manufacturing method and exposure equipment","description":"There are provided a lithography method capable of selecting best resist and a semiconductor device manufacturing method and exposure equipment based on the lithography method. The lithography method ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11493850","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11493850","citation_suggestion":"Patentable. \"Lithography method using multi-scale simulation, semiconductor device manufacturing method and exposure equipment\" (US-11493850). https://patentable.app/patents/US-11493850","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11493850","json":"https://patentable.app/api/llm-context/US-11493850","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:52:00.481Z"}