{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11495295","patent":{"patent_number":"US-11495295","title":"Variable resistance memory device","assignee":null,"inventors":[],"filing_date":"2021-06-16T00:00:00.000Z","publication_date":"2022-11-08T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A variable resistance memory device includes: a memory cell including a first and second sub memory cell; and a first, second and third conductor. The first sub memory cell is above the first conductor, and includes a first variable resistance element and a first bidirectional switching element. The second sub memory cell is above the second conductor, and includes a second variable resistance element and a second bidirectional switching element. The second conductor is above the first sub memory cell. The third conductor is above the second sub memory cell. The variable resistance memory device is configured to receive first data and to write the first data to the memory cell when the first data does not match second data read from the memory cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Variable resistance memory device","description":"A variable resistance memory device includes: a memory cell including a first and second sub memory cell; and a first, second and third conductor. The first sub memory cell is above the first conducto","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11495295","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11495295","citation_suggestion":"Patentable. \"Variable resistance memory device\" (US-11495295). https://patentable.app/patents/US-11495295","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11495295","json":"https://patentable.app/api/llm-context/US-11495295","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:36:52.800Z"}